Equations were proposed for quasi-chemical reactions leading to the formation of intrinsic and impurity defects and defect complexes in Cl-doped cadmium telluride crystals during annealing in Cd vapor at different temperatures. The equilibrium constants for the formation of (ClTe+VCd2−)− defect complexes and TeCd2+ antisite defects were calculated. An analytical expression was derived for the Cd partial pressure corresponding to a type conversion. The conditions were established for producing n- and p-type CdTeCl crystals with controlled carrier concentration.

Modeling of Point Defects in Cl-Doped CdTe Crystals Annealed in Cd Vapor. D.M.Freik, U.M.Pysklynets, L.I.Mezhylovska: Inorganic Materials, 2005, 41[6], 565-9