The defect structure of donor-doped Te-rich CdTe was studied theoretically within the quasi-chemical formalism, and experimentally, in heavily In-doped CdTe by in situ high-temperature galvanomagnetic measurements performed at 900 to 200C. The experimental data were evaluated with a defect model which was optimised to recent high-temperature experiments, assuming a doping-induced band gap renormalization. It was shown that a suitable heat treatment could be conveniently used for optimisation of the room-temperature electrical properties and for the preparation of semi-insulating detector-grade material with a deep-level doping below the required limit of 1013/cm3.

High-Temperature Defect Study of Tellurium-Enriched CdTe:In. R.Grill, P.Fochuk, J.Franc, B.Nahlovskyy, P.Höschl, P.Moravec, Z.Zakharuk, Y.Nykonyuk, O.Panchuk: Physica Status Solidi B, 2006, 243[4], 787-93