The electrical properties of CdTe:Pb single crystals at 400 to 900C, under controlled Cd vapour pressures of 0.001 to 3atm, were investigated here for the first time. The temperature and pressure dependences of the conductivity and Hall coefficient were measured. A low (in comparison with undoped CdTe) electron concentration indicated an increase in the number of impurity point defects related to the Pb impurity. The results obtained were explained within the Kröger theory of quasi-chemical reactions of defect formation under the assumption that Pb could exist in the isolated state (PbCd+) and as a component of (PbCd+VCd2−) associates.

Electrical Characteristics of CdTe:Pb Single Crystals at High Temperatures. P.M.Fochuk, O.A.Parfenyuk, O.E.Panchuk: Semiconductors, 2006, 40[6], 646-50