The transition of Ge-, Sn- and Pb-doped CdTe crystals to semi-insulating behavior was analyzed in terms of a charge-compensation model which included shallow donor and acceptor states and defects with mid-gap energy levels. The model predictions were compared with experimental resistivity data for various doping levels. The deep levels were assumed to be due to dopant atoms. The results indicated that deep stoichiometric defects (VCd and TeCd) had an insignificant effect upon the electrical properties of the material.

Doping of Cadmium Telluride with Germanium, Tin and Lead. P.N.Gorlei, O.A.Parfenyuk, M.I.Ilashchuk, I.V.Nikolaevich: Inorganic Materials, 2005, 41[12], 1266-9