The effect, of post-growth low-temperature Ga-doping, upon the photoluminescence of p-type bulk crystals was investigated. It was shown that, during annealing in a Ga-bath, Ga atoms were incorporated as GaCd donors. In crystals with CuCd and LiCd as residual acceptors, the Ga atoms replaced Cu and Li at Cd sites so as to form 2 shallow donors, GaCd and (Cu,Li)i, per Ga atom. Comparisons were made of the Ga-annealing of p-type CdTe, and annealing in vacuum, Cd vapor or a Hg-Te atmosphere.

N.V.Sochinskii, V.N.Babentsov, N.I.Tarbaev, M.D.Serrano, E.Diéguez: Materials Research Bulletin, 1993, 28[5], 1061-6