The implantation of 111In was investigated by using the perturbed angular correlation technique. It was shown that the damage which arose from the implantation annealed out at 200C. At 250 to 500C, a new defect was detected which was related to the loss of Cd and could be inhibited when the escape of Cd was prevented. Out-diffusion of In began at about 500C, and essentially no In remained at 650C.

R.Kalish, M.Deicher, G.Schatz: Journal of Applied Physics, 1982, 53[7], 4793-9