Hetero-epitaxial As-doped p-type (100) CdTe layers were grown here, for the first time, onto (100) Si by using molecular beam epitaxial techniques. Stacked BaF2-CaF2 was used as a buffer layer. Dopant activation was carried out by using an extra Cd source, and laser illumination of the substrate during growth. Surface reconstruction was studied during growth and was correlated with Te desorption, Cd migration and As substitution at Te vacancy sites. The 8K photoluminescence spectra of the layers exhibited a dominant peak at 1.59eV. The As acceptor level corresponded to a shallow level with an activation energy of 0.06eV.

A.N.Tiwari, S.Blunier, H.Zogg: Applied Physics Letters, 1992, 60[5], 621-3