Deep levels in p+-on-n mesa-type Hg0.778Cd0.222Te, which had been grown onto Si substrates via molecular beam epitaxy, were studied by using isothermal capacitance transient spectroscopy and deep-level transient spectroscopy. Five deep levels were found, and the associated activation energies and capture cross-sections were calculated. The levels were located between 0.0197 and 0.0457eV below the conduction-band edge. Three deeper levels were considered to be related to the Hg vacancy, whereas 2 shallower levels were considered to be related to an impurity in the n-type region. The capture cross-sections ranged from 10-18 to 10-11cm2.

Study of Deep Levels in Mesa-Type HgCdTe. J.Yoshino, J.Morimoto, H.Wada: Japanese Journal of Applied Physics - 1, 1998, 37[7], 4027-31