The effect of various substrates upon deep levels was investigated by means of deep-level transient spectroscopy. Here, CdZnTe (which had almost the same lattice constant and thermal expansion coefficient as HgCdTe) and Si (which had a larger lattice constant and thermal expansion coefficient than HgCdTe) were used as substrates. The results showed that there were 6 levels between 0.027eV and 0.056eV as activation energies in HgCdTe which had been grown on a Si substrate, while there were 6 levels between 0.01eV and 0.044eV as activation energies in HgCdTe which had been grown on the CdZnTe substrate. It was confirmed that samples which had been grown onto Si had deeper levels than samples which had been grown onto CdZnTe.

Studies of deep levels in HgCdTe grown on CdZnTe and Si substrates J.Yoshino, J.Morimoto, H.Wada: Japanese Journal of Applied Physics - 1, 1998, 37[7], 4032-6