The spatial distribution of defects in Hg1−xCdxTe were determined after ion implantation with H and Ar ions at constant low current densities and after implantation with Cu, W and Al ions in the case of pulsed bombardment at high ion current densities. Secondary ion mass spectrometry, electron–positron annihilation, Rutherford back-scattering and differential Hall measurements were used to obtain distribution profiles of impurity atoms, vacancies and electrically active defects. The results showed that the electron concentration in the implanted layer saturated with increasing ion dose and that the peak depth was also dose-dependent. The results revealed a clear difference between the low- and high-current cases. For a constant low current density beam, the implanted ions were localized around the mean projected range. When a strong pulsed beam was used, the range was shorter than the theoretical estimate.

Spatial Distribution Profiles of Defects in Mercury Cadmium Telluride after Ion Implantation. A.V.Voitsekhovskii, A.P.Kokhanenko, S.A.Shulga, R.Smith: Nuclear Instruments and Methods in Physics Research B, 2004, 215[1-2], 109-21