Epitaxial n-type films with a cellular structure were irradiated with ns laser pulses. It was found that certain intensity ranges caused the gettering, of electrically active point defects, by cell boundaries which acted as sinks. An increase in the photo-sensitivity of irradiated samples was observed. This was attributed to a reduction in the effective carrier density and to an increase in their mobility. These changes were attributed to the laser-stimulated segregation of impurities and intrinsic point defects at weak misorientation regions and other macro-defects, followed by recombination of these defects.

Laser-Stimulated Gettering Processes in CdHgTe Solid Solutions V.A.Gnatyuk, O.S.Gorodnychenko, A.V.Lomovtsev, P.O.Mozol, O.I.Vlasenko: Solid State Phenomena, 1999, 69-70, 253-8