A linear dependence was found experimentally between the 1/f noise power in the HgCdTe photodiodes and the fraction of ionized Hg vacancies in the HgCdTe layer. The number and sign of charge carriers were deduced from Hall measurements. Total point-defect concentrations were extracted by using a combination of high-resolution X-ray diffraction for precise measurements of lattice parameters and Fourier transform infrared transmission for determination the Cd content. The experimental findings supported the Grüneiss model.

Point-Defect Influence on 1/f Noise in HgCdTe Photodiodes. N.Mainzer, E.Lakin, E.Zolotoyabko: Applied Physics Letters, 2002, 81[4], 763-5