A mathematical model to describe processes occurring during the irradiation of semiconductor materials with high power pulsed ion beams was proposed. The model takes account of recombination between vacancies and interstitial atoms and the formation of defect complexes and these processes were analyzed. The effect of an inhomogeneous non-stationary temperature field and mechanical quasi-static and dynamic stress fields on radiation defect profiles was also examined. Spatial profiles of the charge carrier concentration and the implanted ion distribution were calculated and a comparison made with experimental profiles obtained for the semiconductor compound Hg1−xCdxTe. The results showed that the defect concentration profiles near to the surface were reduced, with a large rate of recombination between vacancy and interstitial atoms.

A Model for the Prediction of Radiation Defect Profiles in Semiconductor Target (HgCdTe) Subjected to High-Power Short-Pulse Ion Beams. A.V.Voitsekhovskii, A.P.Kokhanenko, S.A.Shulga, R.Smith: Nuclear Instruments and Methods in Physics Research Section B, 2005, 227[4], 531-44