The equilibrium defect structure of Hg1−xCdxTe crystals and the diffusion of Hg in this material were investigated. The results were obtained by using an optical method for free carrier concentration measurements at about 300K. A new model for Hg diffusion was used, taking account of the effect of charged-defect electrical drift. As result, a consistent system of reaction constants for Hg vacancies and Hg interstitials in Hg1−xCdxTe crystals was obtained.

Reaction Constants for Main Cationic Native Defects in Narrow-Gap Hg1−xCdxTe Crystals. V.V.Bogoboyashchyy, K.R.Kurbanov: Journal of Alloys and Compounds, 2004, 371[1-2], 97-9