By using a new technique, the concentrations and energy levels of dopants in a semiconductor could be uniquely determined from the temperature-dependence of the majority-carrier concentration; as deduced from Hall-effect measurements. That is, the concentration and energy level of each dopant could be evaluated by using the corresponding peak value and the temperature dependence. In N-doped 4H-type material, the concentration and energy level of the shallow donor were 6.45 x 1015/cm3 and Ec - 0.0653eV, respectively. Those of the deep donor were 3.04 x 1016/cm3 and Ec - 0.124eV, respectively. The acceptor concentration was 6.14 x 1013/cm3. These data were quite reliable.

Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement H.Matsuura, T.Kimoto, H.Matsunami: Japanese Journal of Applied Physics - 1, 1999, 38[7A], 4013-6