It was reported that rotation twins as well as reflection twins formed easily in samples which were grown, using molecular beam epitaxial techniques, in the (111) orientation. Twinning could be avoided by carefully controlling substrate preparation and by closely controlling growth conditions such as the stability of the Hg pressure and the surface temperature of the substrate; which were difficult to control when the substrate was rotated. Twin-free CdTe layers were grown on GaAs and Si substrates. Excellent thickness uniformities were reported. That is, 0.24% for the standard deviation of a 5cm-diameter CdTe layer grown on (100) GaAs and 2.3% for a 12.5cm-diameter CdTe layer grown on (100) Si.

J.P.Faurie, R.Sporken, S.Sivananthan, M.D.Lange: Journal of Crystal Growth, 1991, 111[1-4], 698-710