The structural defects which were present in large single crystals, grown at the same temperature by using 2 different vapor-phase techniques, were investigated by means of transmission electron microscopy, scanning electron microscopy, electron beam induced current, EDX and chemical etching techniques. The differing defect contents of the two types of crystal were attributed to the large differences in the times which were required to grow the crystals using the 2 separate techniques. In crystals which were grown using the slower method, the development of sub-grain boundaries and precipitates reached a much more advanced stage than that in crystals which were grown using the faster technique.

K.Durose, G.J.Russell: Journal of Crystal Growth, 1988, 86[1-4], 471-6