Two P centres, an isolated P atom which replaced Si, PSi, and a Si-site P-atom adjacent to a C vacancy, PSi + VC, were investigated by means of first-principles calculations. It was shown that PSi + VC produced a singly-occupied donor level which lay deeper than that of PSi, but above the double-donor level of VC. The calculated spin distribution indicated that the P-related paramagnetic resonance signals, P1,2 and P-V, originated from this complex.

Phosphorus-Related Deep Donor in SiC A.Gali, P.Deák, P.R.Briddon, R.P.Devaty, W.J.Choyke: Physical Review B, 2000, 61[19], 12602-8