Layers of CdTe were created by means of organometallic chemical vapor deposition. The GaAs substrates had (311), (211) and (511) orientations. The application of straightforward rules explained the various types of growth which were observed. The rules were based upon the continuity of atomic planes which lay at small angles to the plane of the interface.

G.Patriarche, A.T.Carli, J.P.Rivière, R.Triboulet, Y.Marfaing, J.Castaing: Physica Status Solidi A, 1993, 138[2], 437-43