A scanning force microscopic study was made of twin-coarsening in CdTe(111) films grown onto GaAs(100). Two types of CdTe(111) twins grew epitaxially and with equal probability on the long-range wavy surface structure developed by previous in situ annealing of the GaAs(100) substrate. Due to this initial substrate wavy structure, the grain coarsening during film growth led to a quasi-one-dimensional rippled pattern. A coarsening mechanism between twins, driven by the formation of stacking faults, was proposed.

Twin Coarsening in CdTe(111) Films Grown on GaAs(100). C.Polop, I.Mora-Seró, C.Munuera, J.García de Andrés, V.Muñoz-Sanjosé, C.Ocal: Acta Materialia, 2006, 54[16], 4285-91