The crystal quality of CdTe(111)/Si(111) epilayers, grown by hot-wall epitaxy, was investigated by using symmetrical and asymmetrical high-resolution X-ray diffraction to reveal the main reason for the improved crystallinity when using the original 2-step growth method. The high-resolution X-ray diffraction data showed that the 2-step growth method markedly reduced the twin content as compared with conventional one-step growth. The twin content in the CdTe epilayer was extremely sensitive to the growth conditions; and especially to the growth rate in the early stages of crystal growth.

Twin Suppression in HWE Grown CdTe Epilayers on Si(111) by Novel Two-Step Growth Procedure. G.M.Lalev, J.Wang, S.Abe, K.Masumoto, M.Isshiki: Materials Letters, 2004, 58[10], 1607-10