The effects of post-implantation annealing upon the homogeneous depth profiles of epitaxially doped B and Al in 4H–SiC were investigated following the ion implantation of various species. A marked decrease in the atomic B concentration was found close to the surface in epitaxially B-doped layers after the implantation of Al, N, or P ions, followed by annealing at 1700C. On the other hand, the Al profiles in epitaxially Al-doped layers were preserved after the same processes.

Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC Caused by Implantation and Annealing. Y.Negoro, T.Kimoto, H.Matsunami, G.Pensl: Japanese Journal of Applied Physics, 2007, 46[8A], 5053-6