The aim of the present work was to examine the effects induced by the implantation of a typical fission product (Cs) into SiC and to study its diffusion behavior during thermal treatments. The results indicated that implantation at room temperature introduced total disorder (amorphization) at about 0.25dpa. Subsequent thermal treatments revealed that defect annealing initiated at about 600C and that SiC began to recover its crystalline structure at about 1300C. The implanted Cs atoms began to diffuse at 1150 to 1300C.

Ion Implantation of Cs into Silicon Carbide - Damage Production and Diffusion Behaviour. A.Audren, A.Benyagoub, L.Thomé, F.Garrido: Nuclear Instruments and Methods in Physics Research Section B, 2007, 257[1-2], 227-30