The diffusion behaviors of V-implanted p- and n-type 4H-SiC were investigated by using secondary ion mass spectrometry. Significant redistribution, especially the out-diffusion of V towards the sample surface, was not observed after 1650C annealing of both p- and n-type samples. Atomic force microscopy was applied to the characterization of surface morphology, indicating the formation of continuous long furrows running in one direction across the wafer surface after 1650C annealing. The surface roughness resulted from the evaporation and re-deposition of Si species on the surface during annealing. The chemical compositions of sample surface were investigated by using X-ray photo-electron spectroscopy. The detailed results of C 1s and Si 2p core-level spectra were presented in order to demonstrate the evaporation of Si from the wafer and the deposition of SiO2 on the sample surface during annealing.

Dopant Diffusion and Surface Morphology of Vanadium Implanted 4H-Silicon Carbide. C.Wang, Y.M.Zhang, Y.M.Zhang, G.L.Ma, H.Guo, D.Q.Xu: Chinese Physics, 2007, 16[8], 2455-61