Positron annihilation lifetime spectroscopy and electron paramagnetic resonance were used to investigate the vacancy defects introduced into the track region of 132MeV 12C irradiated carbide. Irradiation was performed at room temperature using a fluence of 2.5 x 1014/cm2 in lightly N-doped 6H–SiC and 3C–SiC monocrystals. Silicon monovacancies were detected in both polytypes by using electron paramagnetic resonance. Their charge states and concentrations were determined in the track and cascade regions of the C+ ions. Positron annihilation lifetime spectroscopic measurements, performed as a function of temperature, revealed the presence of VSi–C divacancies in the track region for both polytypes.

Vacancy Defects induced in the Track Region of 132MeV 12C Irradiated SiC. X.Kerbiriou, M.F.Barthe, S.Esnouf, P.Desgardin, G.Blondiaux, E.Balanzat: Nuclear Instruments and Methods in Physics Research Section B, 2006, 250[1-2], 259-62