The deformation microstructure of single crystals of 4H-SiC resulting from micro-indentations of a prismatic surface was investigated by transmission electron microscopy. Indentations were performed at 400 and 675C, i.e. below the brittle to ductile transition temperature of 4H-SiC (close to 1100C). Transmission electron microscopic analysis revealed dissociated dislocations as well as extended stacking faults in the basal plane. In addition, perfect edge dislocations were observed on prismatic planes. From the observations, it was assumed that perfect dislocations were nucleated in the prismatic plane and cross-slip on the basal one where they dissociate.

TEM Study of Defects Generated in 4H-SiC by Microindentations on the Prismatic Plane. A.Mussi, J.L.Demenet, J.Rabier: Philosophical Magazine Letters, 2006, 86[9], 561-8