Fast homo-epitaxial growth of 4H-SiC was carried out on 8° off-axis (0001)Si substrates by horizontal hot-wall chemical vapor deposition at 1650C. Growth at low pressure, by which gas-phase Si condensation could be minimized, has made it possible to obtain mirror-like surface at high growth rate up to 50μm/h. Epilayers grown on chemical mechanically polished substrates showed much better surface morphology than those on as-received substrates. The basal-plane dislocation density could be decreased by fast epitaxy on chemical mechanically polished substrates, and the minimum basal-plane dislocation density obtained here was 22/cm2. The concentration of Z1/2 and EH6/7 centers was in the low 1012/cm3 range even at high growth rate of 50μm/h. In photoluminescence, free exciton peaks were remarkably dominant, and impurity-related peaks and L1 peak were hardly observed.

Fast Homoepitaxial Growth of 4H-SiC with Low Basal-Plane Dislocation Density and Low Trap Concentration by Hot-Wall Chemical Vapor Deposition. T.Hori, K.Danno, T.Kimoto: Journal of Crystal Growth, 2007, 306[2], 297-302