SiC p-i-n diodes exhibited an increase in the voltage drop under forward bias which was linked with the increased mobility of the partial dislocations. Through first-principles calculations I have investigated the Shockley partials in 4H-SiC. I have found that the asymmetric reconstructions do not posses mid-gap states, while the symmetric reconstructions were always electrically active with a half-filled band. The kink migration analysis have demonstrated that the symmetric reconstructions were always more likely to migrate. Further I have proposed a new theoretical model that could explain the enhancement of the dislocation mobility under forward bias. This model could be applied to any semiconductor materials in order to predict the behavior under electron-hole plasma injections.

Theory of Partial Dislocations in SiC. G.Savini: Physica Status Solidi C, 2007, 4[8], 2883-7