A model of the transformation of SiC polytypes in the course of growth of an epitaxial layer was suggested. The model was based on the variation with time of the concentrations of C and silicon vacancies in the transition layer. A relationship between the lifetimes of these vacancies was obtained in terms of the model.

Vacancy Kinetics in Heteropolytype Epitaxy of SiC. S.Y.Davydov, A.A.Lebedev: Semiconductors, 2007, 41[6], 621-4