Stacking fault detection in free-standing cubic-SiC epilayer by using Raman measurements was reported. An epilayer with enhanced stacking faults was hetero-epitaxially grown by low-pressure chemical vapor deposition onto a Si(100) substrate and was released in KOH solution by micromechanical manufacture, on which the Raman measurements were performed in a back scattering geometry. The TO line of the Raman spectra was considerably broadened and distorted. The influence of stacking faults on the intensity profiles of TO mode was deduced by comparing these experimental data with simulated results based upon the Raman bond polarizability (BP) model in the framework of the linear-chain concept. Good agreement with respect to the line-width and disorder-induced peak shift was found by assuming the mean distance of the stacking faults to be 11Å in the bond polarizability model.

Raman Scattering Detection of Stacking Faults in Free-Standing Cubic-SiC Epilayer. X.F.Liu, G.S.Sun, J.M.Li, Y.M.Zhao, J.Y.Li, L.Wang, W.S.Zhao, Y.P.Zeng, X.F.Liu: Chinese Physics Letters, 2006, 23[10], 2834-7