Polycrystalline SiC was grown by a spontaneous nucleation sublimation method. The microstructures of SiC polycrystalline were observed by transmission electron microscopy. It was found that SiC polycrystalline has highly preferential orientation with the (00▪1) plane lying on the growth surface and there were only small misorientations among different grains. A great number of stacking faults were observed in the SiC polycrystalline film. These stacking faults were tilted to the film surface with different angles. The properties of the stacking faults were determined on the basis of the extinction rule.

Stacking Faults in SiC Crystal Grown by Spontaneous Nucleation Sublimation Method. X.Hu, X.Xu, X.Li, S.Jiang, J.Li, L.Wang, J.Wang, M.Jiang: Journal of Crystal Growth, 2006, 292[2], 192-6