The electronic properties of single- and double-layer stacking faults in 4H-SiC were considered, and some insight was obtained into the apparent distinctions of recombination-enhanced defect reactions at these faults. Photoluminescence imaging spectroscopy and deep-level transient spectroscopy experiments revealed key constituents of radiative recombination and also provided good evidence of non-radiative centers, at EV+0.38eV, which were responsible for the recombination-enhanced mobility of Si-core partial dislocations. A comprehensive energy level model was proposed which allowed for a qualitative description of recombination activity at various types of stacking faults and the corresponding bounding partial dislocations.

Combined Photoluminescence-Imaging and Deep-Level Transient Spectroscopy of Recombination Processes at Stacking Faults in 4H-SiC. A.Galeckas, A.Hallén, S.Majdi, J.Linnros, P.Pirouz: Physical Review B, 2006, 74[23], 233203 (4pp)