Electroluminescence images of 4H-SiC PiN diodes were presented which provided evidence that electrically and optically stimulated Shockley stacking fault propagation was a reversible process at as low as 210C. Optical beam-induced current images, following complete optical stressing of a PiN diode leading to a small number of completely propagated Shockley stacking fault, provided evidence that such defects propagated across the n–/p+ interface and continued to grow throughout the p+ layer. The observations raised questions concerning the validity of currently accepted driving-force mechanisms for SSF propagation.

Thermal Annealing and Propagation of Shockley Stacking Faults in 4H-SiC PiN Diodes. J.D.Caldwell, K.X.Liu, M.J.Tadjer, O.J.Glembocki, R.E.Stahlbush, K.D.Hobart, F.Kub: Journal of Electronic Materials, 2007, 36[4], 318-23