For n-type Si-doped AlN with a low Si doping concentration of 3 x 1017/cm2, a high room-temperature electron mobility of 426cm2/Vs was achieved, and at 220K the mobility reached 730cm2/Vs, the highest value ever reported for AlN. At Si doping concentrations lower than 1018/cm3, dislocation scattering was the most dominant scattering mechanism, and the mobility could therefore be increased significantly by reducing the dislocation density.

Increased Electron Mobility in n-Type Si-Doped AlN by Reducing Dislocation Density. Y.Taniyasu, M.Kasu, T.Makimoto: Applied Physics Letters, 2006, 89[18], 182112 (3pp)