Growth of AlN on (11▪0) 4H-SiC a-plane face substrates by molecular-beam epitaxy was investigated. Nonpolar (11▪0) 4H-AlN was isopolytypically grown on (11▪0) 4H-SiC substrates under slightly Al-rich conditions. When growth was performed under slightly N-rich conditions, (11▪0) 2H-AlN with high stacking fault density was obtained. A reduced density of defects such as stacking faults and threading dislocations was achieved by growing in slightly Al-rich conditions. For the best sample, the stacking fault density was 2 x 105/cm, and the partial and perfect threading dislocation densities were 7 x 107 and 107/cm2, respectively.

Reduction of Threading Dislocations in Nonpolar 4H-AlN on 4H-SiC (11▪0) Grown by Molecular-Beam Epitaxy with Slightly Al-Rich Conditions. M.Horita, J.Suda, T.Kimoto: Physica Status Solidi C, 2007, 4[7], 2552-5