The atomic and electronic properties of dislocations in III-N semiconductor layers, especially GaN, were presented. The atomic structure of the a edge threading dislocation was now well established with 3 different cores (8 or full core, 5/7 or open core, and 4-atom ring). The use of atomistic simulations has confirmed these atomic structures and has given a good understanding of the electronic structure of the screw dislocation. Partial dislocations which were mostly confined in the area close to the substrate were now also being investigated. It was becoming clear that the electrical activity of all these defects was dependent on the layer quality, which was governed by the growth conditions.

The Atomic and Electronic Structure of Dislocations in Ga-Based Nitride Semiconductors. I.Belabbas, P.Ruterana, J.Chen, G.Nouet: Philosophical Magazine, 2006, 86[15], 2241-69