An investigation was made of the problem of O-dislocations interaction and its influence on carrier concentration in GaN layers. Samples having various dislocation densities were obtained. The carrier concentration was then checked by means of Hall measurements. Samples with a higher etch-pit density were characterized by a higher electron concentration. It was assumed that O diffused along the threading dislocation lines, acted as a shallow donor and influenced unintentional doping. Thus, when more dislocations were present in GaN layers, the carrier concentration was higher.

Interaction between Dislocations Density and Carrier Concentration of Gallium Nitride Layers. E.Dumiszewska, W.Strupinski, K.Zdunek: Journal of Superhard Materials, 2007, 29[3], 174-6