The structural, optical, and transport properties of high-quality InN epitaxial films, grown onto GaN substrates by plasma-assisted molecular beam epitaxy, were studied. A strong correlation was found between structural quality and the measured carrier mobilities. A comparison of temperature-dependent Hall data with a theoretical transport model indicated that the electron mobility in state-of-the-art InN was limited by charged dislocation scattering. The model predicted that an order-of-magnitude increase in electron mobilities could be achieved by the reduction of dislocation densities in InN.

Effect of Dislocation Scattering on the Transport Properties of InN Grown on GaN Substrates by Molecular Beam Epitaxy. K.(A)Wang, Y.Cao, J.Simon, J.Zhang, A.Mintairov, J.Merz, D.Hall, T.Kosel, D.Jena: Applied Physics Letters, 2006, 89[16], 162110 (3pp)