An attempt was made here to clarify the H behavior in silicon nitride in order to optimize film characteristics for applications. An experimental methodology was designed in order to discriminate statistically the film properties which governed H diffusion and desorption from PECVD silicon nitride. Finally, via trials of sensor devices and dark-current measurements, the effect of a SiN passivation layer upon remaining Si defects was confirmed and an optimized passivation stack was proposed.

Hydrogen Desorption and Diffusion in PECVD Silicon Nitride - Application to Passivation of CMOS Active Pixel Sensors. D.Benoit, J.Regolini, P.Morin: Microelectronic Engineering, 2007, 84[9-10], 2169-72