A detailed experimental investigation was made, of the electronic band structure of the (001)-c(4 x 2) surface of 3C-type material, by using angle-resolved photo-emission and synchrotron radiation techniques. A prominent surface state was identified at -1.5eV with, relative to the Fermi level, a downward dispersion of about 0.2eV. Two other surface states were found; at energies of -0.95 and -2.5eV. The electronic structure was semiconducting, and was very similar to that of the 2 x 1 reconstruction; thus confirming the close relationship between the c(4 x 2) and 2 x 1 structures. A comparison with theoretical band structure calculations yielded no satisfactory agreement.

Surface States of the 3C-SiC(001)-c(4 x 2) Surface Studied using Angle-Resolved Photoemission L.Duda, L.S.O.Johansson, B.Reihl, H.W.Yeom, S.Hara, S.Yoshida: Physical Review B, 2000, 61[4], R2460-3