By using the off-axis radio-frequency magnetron sputtering method, thin films were successfully fabricated on Y-stabilized zirconia [001] substrates having 2 distinct in-plane orientations: YBCO[100]||YSZ[100] (0° in-plane orientation) at 825C and YBCO[110]||YSZ[100] (45° in-plane orientation) at 670C. Both orientations of the thin films had critical temperatures of 86 to 88K and critical current densities of 9 x 106 to 1.2 x 107A/cm2 at 5K. Using a thin Cu3Ba2YO7 film deposited at 825C as the seed layer, a 45° grain boundary junction was fabricated. The critical current densities of this 45° grain boundary junction were 103 to 104A/cm2 at 4.2K, and the I–V curves were RSJ-like. They were comparable to those of 45° grain boundary junctions created by using the pulse laser deposition technique.

A New 45° Homo-Biepitaxial YBCO Grain Boundary Junction Process Fabricated using Off-Axis RF Sputtering. Y.M.Lai, P.A.Lin, C.C.Chi: Journal of Physics D, 2007, 40[12] 3670-3