The formation and annealing of O-related defects in samples which had been subjected to irradiation with fast electrons was investigated. It was shown that a reduction in the efficiency of formation of O-related defects (VO, VO2) was observed at Ge contents of 3.5 to 15at%. The presence of 3 types of VO center was detected.

Radiation Defect Formation in Si<Ge> L.I.Khirunenko, Y.V.Pomozov, M.G.Sosnin, N.V.Abrosimov, M.Höhne, W.Schröder: Solid State Phenomena, 1999, 69-70, 209-14