Deep level transient spectroscopic studies of 2MeV proton-induced deep level defects were performed using highly P-doped strained Si0.87Ge0.13 layers which had been grown using chemical vapour deposition. It was found that the bombardment resulted in the formation of a dominant peak in the spectra that corresponded to a deep level which was located at 0.47eV below the conduction band edge. Isochronal (1200s) annealing of the observed deep level revealed that, at 100C, the peak maximum shifted to lower temperatures that corresponded to another level which was at 0.42eV below the conduction band edge. It remained stable at up to 250C. These 2 levels were suggested to be associated with VP and V2.

Radiation Induced Defect Levels in Highly Doped n-Type SiGe Strained Layers E.V.Monakhov, A.Y.Kuznetsov, H.H.Radamson, B.G.Svensson: Solid State Phenomena, 1999, 69-70, 185-90