Preferred c-axis oriented thin films were prepared on a Si substrate by means of pulsed-laser deposition. The chemical diffusion coefficients of Li in the films were measured by means of electrochemical impedance spectroscopy and potentiostatic intermittent titration. The chemical diffusion coefficient was found to range from 10−11 to 10−13cm2/s; depending upon the Li concentration and the characterization method used.

Li Diffusion in LiCoO2 Thin Films Prepared by Pulsed Laser Deposition. H.Xia, L.Lu, G.Ceder: Journal of Power Sources, 2006, 159[2], 1422-7