The effect of surface stoichiometric defects upon the electronic and electrical properties of SnO2 layers was studied by means of computer simulation. The surface potential and in-depth potential profiles in the accumulation region were computed at 400 to 900K. The behavior of both the surface and bulk Fermi level position, as a function of temperature, was analyzed. In-depth profiles of carrier concentration and the surface potential, as well as the SnO2 layer conductance for various surface donor densities of state, were also calculated. It was found that a surface reduction and bulk donor concentration (ranging from 3 x 1014 to 3 x 1018/cm3) were strongly correlated with the development of a near-surface accumulation region and thus with modification of the layer electrical parameters.

Computer Analysis of an Influence of Oxygen Vacancies on the Electronic Properties of the SnO2 Surface and Near-Surface Region. W.Izydorczyk, B.Adamowicz, M.Miczek, K.Waczynski: Physica Status Solidi A, 2006, 203[9], 2241-6