A low-temperature Si0.8Ge0.2 interlayer was grown at 500C in order to improve the relaxed SiGe surface and reduce the dislocation density. This was confirmed by a change in the reflective high-energy electron diffraction from spotty to streaky and by etch-pit data. For a given degree of strain, the threading dislocation density was reduced from 8 x 107/cm2 to 2 x 106/cm2.

Effect of Low-Temperature SiGe Interlayer on the Growth of Relaxed SiGe D.Li, C.Huang, B.Cheng, H.Wang, Z.Yu, C.Zhang, J.Yu, Q.Wang: Journal of Crystal Growth, 2000, 213[3-4], 308-11