The effect of radiation upon D diffusion mechanisms in fused silica was studied. The D was introduced by 50keV ion-implantation, and then irradiated at various temperatures in order to induce diffusion. Modification of the implantation profile was determined by means of elastic recoil detection analysis, using Si ions. It was observed that high dose-rate ionizing irradiation (over 100Gy/s) induced changes in the D profile; even at room temperature. No significant effects were observed for lower dose-rate ionizing radiation effects or displacement radiation effects arising from 1.2MeV Si-ion bombardment.

Radiation Effects on the Deuterium Diffusion in SiO2. A.Ibarra, A.Muñoz-Martín, P.Martín, A.Climent-Font, E.R.Hodgson: Journal of Nuclear Materials, 2007, 367-370[2], 1003-8