It was recalled that metal–oxide–silicon diode structures containing ion-implanted electropositive and electronegative ions were promising materials. However, the implantation process created defects in the SiO2 layer. After implantation, annealing led to the diffusion of implanted elements and to broadening of the SiO2/Si interface. The influence of various implanted ions (Gd, F, K) was investigated by means of electroluminescence measurements and correlated with various defects in the oxide layer. Implanted electronegative ions (such as F) led to defects which comprised O2 molecules and peroxy radicals. On the other hand, electropositive ions (Gd, K) increased the number of O-vacancy defects.

Electronegativity and Point Defect Formation in the Ion Implanted SiO2 Layers. S.Prucnal, J.M.Sun, H.Reuther, C.Buchal, J.Żuk, W.Skorupa: Vacuum, 2007, 81[10], 1296-300