It was noted that in situ TiB whiskers had an hexagonal shape in the transverse section and grew along the [010] direction. The crystallographic planes of TiB whiskers in the transverse section were always (100), (101) and (10¯1). Stacking faults typically had a (100) fault plane. The locations of B atoms and the lattice mismatch energy between TiB and a Ti matrix played key roles in the formation of stacking faults.

Stacking Faults Formation Mechanism of in situ Synthesized TiB Whiskers. H.Feng, Y.Zhou, D.Jia, Q.Meng: Scripta Materialia, 2006, 55[8], 667-70