Examples of growth-induced or process-induced defects in strain-relaxed SiGe alloy layers, when grown epitaxially onto Si substrates, were considered. In particular, the reduction in the density of threading dislocations by using various types of buffer layer to accommodate the misfit strain was examined. As examples of process-induced defects, the vacancy, the di-vacancy and the Sb-vacancy pair in n-type SiGe were treated.

Growth- and Process-Induced Defects in SiGe-Based Heterostructures A.N.Larsen: Solid State Phenomena, 1999, 69-70, 43-52